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072N10N Datasheet Power Transistor

Manufacturer: Infineon

Overview

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.