072N10N Description
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor.
072N10N Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- 55 ... 175
- case Thermal resistance, junction
- ambient