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Infineon Technologies Electronic Components Datasheet

07N60C3 Datasheet

Power Transistor

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SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.6
7.3
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
High peak current capability
Improved transconductance
P-TO220-3-31
1 23
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23
1
Type
SPP07N60C3
SPI07N60C3
SPA07N60C3
Package
PG-TO220-3
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4400
Q67040-S4424
SP000216303
Marking
07N60C3
07N60C3
07N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
7.3
4.6
21.9
230
7.31)
4.61)
21.9
230
0.5 0.5
7.3 7.3
±20 ±20
±30 ±30
83 32
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
Rev. 3.3
Page 1
Page 1
2009-11-27
2018-02-13


Infineon Technologies Electronic Components Datasheet

07N60C3 Datasheet

Power Transistor

No Preview Available !

SPP07N60C3
SPI07N60C3, SPA07N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol
dv/dt
Value
50
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
- - 1.5 K/W
- - 3.9
- - 62
- - 80
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=7.3A
600
-
-
700
-V
-
Gate threshold voltage
VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C
- 0.5 1
Tj=150°C
- - 100
Gate-source leakage current
I GSS
VGS=30V, VDS=0V
-
- 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A
Tj=25°C
- 0.54 0.6
Tj=150°C
- 1.46 -
Gate input resistance
RG
f=1MHz, open drain
-
0.8
-
Rev. 3.2
Rev. 3.3
Page 2
Page 2
2009-11-27
2018-02-13


Part Number 07N60C3
Description Power Transistor
Maker Infineon
Total Page 15 Pages
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