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Infineon Technologies Electronic Components Datasheet

090N03LG Datasheet

IPD090N03LG

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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
IPD090N03L G
IPS090N03L G
IPF090N03L G
IPU090N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
9 m
40 A
Type
IPD090N03L G
• Avalanche rated
• Pb-free plating; RoHS compliant
IPF090N03L G
IPS090N03L G
IPU090N03L G
Package
Marking
PG-TO252-3-11
090N03L
PG-TO252-3-23
090N03L
PG-TO251-3-11
090N03L
PG-TO251-3-21
090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.0
ID
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=12 A, R GS=25
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
40
37
40
30
280
40
40
6
±20
Unit
A
mJ
kV/µs
V
2006-10-23
Free Datasheet http://www.datasheet-pdf.com/


Infineon Technologies Electronic Components Datasheet

090N03LG Datasheet

IPD090N03LG

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPD090N03L G
IPS090N03L G
IPF090N03L G
IPU090N03L G
Value
42
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 3.6 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance5)
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
- 10 100 nA
- 10.8 13.5 m
V GS=10 V, I D=30 A
- 7.5 9
Gate resistance
RG
- 1.1 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
28
55
-S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.0
page 2
2006-10-23
Free Datasheet http://www.datasheet-pdf.com/


Part Number 090N03LG
Description IPD090N03LG
Maker Infineon
Total Page 12 Pages
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