12M1H060 - 1200V SiC Trench MOSFET

Infineon

Features

Very low switching losses.
Threshold-free on state characteristic.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses.
Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
Efficiency improvement.
Enabling higher frequency.

12M1H060 1200v sic trench mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	12M1H060
Manufacturer	Infineon
File Size	1.20 MB
Description	1200V SiC Trench MOSFET
Datasheet	12M1H060 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
12MBI100VN-120-50	IGBT Module	fuji electric
12MBI100VN-120-50	IGBT Module	Fuji Electric
12MBI100VN-120-50	Power Devices (IGBT)	ETC
12MBI100VX-120-50	IGBT Module	fuji electric
12MBI100VX-120-50	IGBT Module	Fuji Electric

Other Datasheets by Infineon

Part Number	Description
12M2H008	1200V SiC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.

Published: Dec 31, 2020 |