Datasheet Summary
IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
- Very low switching losses
- Threshold-free on state characteristic
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Fully controllable dV/dt
- Robust body diode for hard mutation
- Temperature independent turn-off switching losses
- Sense pin for optimized switching performance
Gate pin 4
Sense pin 3
Drain pin 1
Source pin 2
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential applications
- Energy generation o...