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12M1H060 Datasheet

1200V SiC Trench MOSFET

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IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Very low switching losses
Threshold-free on state characteristic
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Gate
pin 4
Sense
pin 3
Drain
pin 1
Source
pin 2
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o Solar string inverter and solar optimizer
Industrial power supplies
o Industrial UPS
o Industrial SMPS
Infrastructure Charge
o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Key Performance and Package Parameters
Type
VDS
IMZ120R060M1H 1200V
ID
TC = 25°C, Rth(j-c,max)
36A
RDS(on)
Tvj = 25°C, ID = 13A, VGS = 18V
60
Tvj,max
175°C
Marking
12M1H060
Package
PG-TO247-4
Datasheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
page 1 of 17
2.1
2019-12-10


Infineon Technologies Electronic Components Datasheet

12M1H060 Datasheet

1200V SiC Trench MOSFET

No Preview Available !

IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
T12a0b0lVe SoifCcTornentechnMtsOSFET
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1 Maximum ratings ................................................................................................................... 3
2 Thermal resistances ............................................................................................................... 4
3 Electrical Characteristics ........................................................................................................ 5
3.1
Static characteristics...............................................................................................................................5
3.2
Dynamic characteristics..........................................................................................................................6
3.3
Switching characteristics ........................................................................................................................ 7
4 Electrical characteristic diagrams ............................................................................................ 8
5 Package drawing...................................................................................................................14
6 Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
2 of 17
2.1
2019-12-10


Part Number 12M1H060
Description 1200V SiC Trench MOSFET
Maker Infineon
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