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1ED3121MU12H - Single-channel 5.7kV (rms) isolated gate driver

Download the 1ED3121MU12H datasheet PDF. This datasheet also covers the 1ED3120MU12H variant, as both devices belong to the same single-channel 5.7kv (rms) isolated gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The 1ED31xxMU12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package.

Key Features

  • 9 Undervoltage lockout (UVLO).
  • . . . . 9 Active shut-down.
  • 9 Short circuit clamping.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1ED3120MU12H-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1ED3121MU12H
Manufacturer Infineon
File Size 438.24 KB
Description Single-channel 5.7kV (rms) isolated gate driver
Datasheet download datasheet 1ED3121MU12H Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1ED31xxMU12H (1ED-X3 Compact) EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clamp or separate output Feature list • Single channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 14.0 A typical peak output current • 40 V absolute maximum output supply voltage • High common-mode transient immunity CMTI > 200 kV/µs • Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping • Galvanically isolated coreless transformer gate driver • 3.3 V and 5 V input supply voltage • Suitable for operation at high ambient temperature and in fast switching applications • UL 1577 certification VISO = 5.