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1ED3121MU12H - Single-channel 5.7kV (rms) isolated gate driver

This page provides the datasheet information for the 1ED3121MU12H, a member of the 1ED3120MU12H Single-channel 5.7kV (rms) isolated gate driver family.

Description

The 1ED31xxMU12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package.

Features

  • 9 Undervoltage lockout (UVLO).
  • . . . . 9 Active shut-down.
  • 9 Short circuit clamping.

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Datasheet Details

Part number 1ED3121MU12H
Manufacturer Infineon
File Size 438.24 KB
Description Single-channel 5.7kV (rms) isolated gate driver
Datasheet download datasheet 1ED3121MU12H Datasheet
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Full PDF Text Transcription

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1ED31xxMU12H (1ED-X3 Compact) EiceDRIVER™ 1ED31xxMU12H Compact Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clamp or separate output Feature list • Single channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 14.0 A typical peak output current • 40 V absolute maximum output supply voltage • High common-mode transient immunity CMTI > 200 kV/µs • Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping • Galvanically isolated coreless transformer gate driver • 3.3 V and 5 V input supply voltage • Suitable for operation at high ambient temperature and in fast switching applications • UL 1577 certification VISO = 5.
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