1ED3860MU12M
Key Features
- 650 V, 1200 V, 1700 V, 2300 V IGBTs, SiC, and Si MOSFETs
- 40 V absolute maximum output supply voltage
- ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current
- Separate source and sink outputs for hard switching or optional two-level turn-off and with active Miller clamp
- I2C bus for parameter configuration and status register readout
- Precise, adjustable, and temperature compensated VCEsat detection (DESAT) with fault output
- Adjustable IGBT soft turn-off after desaturation detection
- Operation at high ambient temperature up to 125 °C with over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (tPDD,max = 30 ns)
- Undervoltage lockout protection with hysteresis for input and output side with active shut-down
