1ED3860MU12M
Features
- 650 V, 1200 V, 1700 V, 2300 V IGBTs, Si C, and Si MOSFETs
- 40 V absolute maximum output supply voltage
- ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current
- Separate source and sink outputs for hard switching or optional two-level turn-off and with active Miller clamp
- I2C bus for parameter configuration and status register readout
- Precise, adjustable, and temperature pensated VCEsat detection (DESAT) with fault output
- Adjustable IGBT soft turn-off after desaturation detection
- Operation at high ambient temperature up to 125 °C with over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (t PDD,max = 30 ns)
- Undervoltage lockout protection with hysteresis for input and output side with active shut-down
- Configurable feedback or fault-off behavior for parator result of integrated ADC
- High mon-mode transient immunity CMTI = 200 k V/µs
- Small space-saving DSO-16 fine-pitch package with large creepage distance (>8...
