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Infineon Technologies Electronic Components Datasheet

2ED2181S06F Datasheet

650V high-side and low-side gate driver

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2ED2181 (4) S06F (J)
2ED2181 (4) S06F (J)
650 V high-side and low-side gate driver with integrated bootstrap diode
Features
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
Logic operational up to –11 V on VS Pin
Negative voltage tolerance on inputs of –5 V
Independent under voltage lockout for both channels
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 V
Dual package options of DSO-8 and DSO-14
High and low voltage pins separated for maximum creepage and
clearance (2ED21814S06J version)
Separate logic and power ground with the 2ED21814S06J version
RoHS compliant
Product summary
VS_OFFSET = 650 V max
Io+pk / Io-pk (typ.) =+ 2.5 A/ - 2.5 A
VCC = 10 V to 20 V
Delay matching = 35 ns max.
Propogation delay = 200 ns
tON / tOFF (typ.) = 200 ns/ 200 ns
Packages
DSO-8
DSO-14
Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or
TRENCHSTOP™ family IGBTs or their equivalent power stages
Battery operated small home appliances such as power tools, vaccum cleaners using low voltage
OptiMOS™ MOSFETs or their equivalent power stages
Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having
high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series
High power LED and HID lighting having CoolMOS™ super junction MOSFETs
Electric vehicle (EV) charging stations and battery management systems
Driving 650 V SiC MOSFETs in above applications
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Ordering information
Base part number
2ED2181S06F
2ED21814S06J
Package type
DSO – 8
DSO – 14
Standard pack
Form
Tape and Reel
Tape and Reel
Quantity
2500
2500
Orderable part number
2ED2181S06FXUMA1
2ED21814S06JXUMA1
Datasheet
www.infineon.com/soi
Please read the Important Notice and Warnings at the end of this document
Page 1 of 24
V 2.20
2020-01-14


Infineon Technologies Electronic Components Datasheet

2ED2181S06F Datasheet

650V high-side and low-side gate driver

No Preview Available !

2ED2181 (4) S06F (J)
650V high-side and low-side driver with integrated bootstrap diode
Description
The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and
low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and
noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC
= 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no
parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel
power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
Up to 650V
2ED2181S06F
HIN
1 HIN
VB 8
LIN
2 LIN
HO 7
3 COM
4 LO
VS
VCC
6
5
VCC
HIN
LIN
VSS
TO LOAD
VCC
2ED21814S06J
1 HIN
2 LIN
3 VSS
4
5 COM
6 LO
7 VCC
14
VB 13
HO 12
VS 11
10
9
8
Up to 650V
TO LOAD
*Bootstrap diode is monolithically integrated
This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout.
Figure 1
Typical application block diagram
Summary of feature comparison of the 2ED218x family:
Table 1
Part No.
Package
2ED2181S06F DSO – 8
2ED21814S06J DSO – 14
2ED2182S06F DSO – 8
2ED21824S06J DSO – 14
2ED2183S06F DSO – 8
2ED21834S06J DSO – 14
2ED2184S06F DSO – 8
2ED21844S06J DSO – 14
Drive
current
source /
sink
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
+ 2.5 A /
- 2.5 A
Cross
Input logic
conduction
prevention
logic
HIN, LIN No
HIN, LIN Yes
HIN, LIN Yes
IN, SD
Yes
Deadtime
None
Internal 400 ns
Programmable
400 ns - 5000 ns
Internal 400 ns
Programmable
400 ns - 5000 ns
Internal 400 ns
Programmable
400 ns - 5000 ns
Ground
pins
tON / tOFF
COM
VSS /
COM
COM
VSS /
COM
COM
VSS /
COM
COM
VSS /
COM
200 ns /
200 ns
600 ns /
200 ns
Datasheet
www.infineon.com/soi
2 of 24
V 2.20
2020-01-14


Part Number 2ED2181S06F
Description 650V high-side and low-side gate driver
Maker Infineon
Total Page 24 Pages
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