Datasheet4U.com

2ED2181S06F Datasheet 650V high-side and low-side gate driver

Manufacturer: Infineon

📥 Download Datasheet

2ED2181S06F 650v high-side and low-side gate driver by Infineon - Datasheet Preview

Datasheet Details

Part number	2ED2181S06F
Manufacturer	Infineon
File Size	1.22 MB
Description	650V high-side and low-side gate driver
Download	2ED2181S06F Download (PDF)

Overview

2ED2181 (4) S06F (J) 2ED2181 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap.

Key Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lockout for both chann.

More Datasheets from Infineon

Part Number	Description
2ED21814S06J	650V high-side and low-side gate driver
2ED21824S06J	650V half-bridge gate driver
2ED21824S06J	650V half-bridge gate driver
2ED2182S06F	650V half-bridge gate driver
2ED2182S06F	650V half-bridge gate driver
2ED21834S06J	650V half-bridge gate driver
2ED2183S06F	650V half-bridge gate driver
2ED21844S06J	650V half-bridge gate driver
2ED2184S06F	650V half-bridge gate driver
2ED2104S06F	650V half bridge gate driver