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2ED2182S06F - 650V half-bridge gate driver

Product Overview

Infineon

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2ED2182S06F 650V half-bridge gate driver by Infineon - Datasheet Preview — Datasheet preview – 2ED2182S06F

Datasheet Details

Part number	2ED2182S06F
Manufacturer	Infineon
File Size	1.35 MB
Description	650V half-bridge gate driver
Datasheet	2ED2182S06F Datasheet
Additional preview pages of the 2ED2182S06F datasheet.

Product details

Description

The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic Operational up to.
11 V on VS Pin.
Negative Voltage Tolerance on Inputs of.
5 V.
Independent under voltage lockout for both chann.

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Published: Apr 16, 2025 |