2ED2182S06F Description
The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggednes.
2ED2182S06F Key Features
- Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic Operational up to -11 V on VS Pin
- Negative Voltage Tolerance on Inputs of -5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis