2ED2181S06F Datasheet | Infineon

Features - Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology - Negative VS transient immunity of 100 V - Floating channel designed for bootstrap operation - Operating voltages (VS node) upto + 650 V - Maximum bootstrap voltage (VB node) of + 675 V - Integrated ultra-fast, low resistance bootstrap diode - Logic operational up to - 11 V on VS Pin - Negative voltage tolerance on inputs of - 5 V - Independent under voltage lockout for both channels - Schmitt trigger inputs with hysteresis - 3.3 V, 5 V and 15 V input logic patible - Maximum supply voltage of 25 V - Dual package options of DSO-8 and DSO-14 - High and low voltage pins separated for maximum creepage and clearance (2ED21814S06J version) - Separate logic and power ground with the 2ED21814S06J version - Ro HS pliant Product summary VS_OFFSET = 650 V max Io+pk / Io-pk (typ.) =+ 2.5 A/ - 2.5 A VCC = 10 V to 20 V Delay matching = 35 ns max. Propogation delay = 200 ns t ON / t OFF (typ.) = 200 ns/ 200 ns Packages DSO-8 DSO-14 Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon remendations are as below: - Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V Easy PACK™ modules - Refrigeration pressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP™ family IGBTs or their equivalent power stages - Battery operated small home appliances such as power tools, vaccum cleaners using low voltage Opti MOS™ MOSFETs or their equivalent power stages - Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage Cool MOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series - High power LED and HID lighting having Cool MOS™ super junction MOSFETs - Electric vehicle (EV) charging stations and battery management systems - Driving 650 V Si C MOSFETs in above applications Product validation Qualified for industrial...