2EDL05N06PF Datasheet | Infineon

Features - Infineon thin-film-SOI-technology - Fully operational to +600 V - Floating channel designed for bootstrap operation - Output source/sink current capability +0.36 A/-0.7 A - Integrated Ultra-fast, low RDS(ON) Bootstrap Diode - Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology - 10 ns typ., 60 ns max. propagation delay matching - d V/dt immune ±50 V - Gate drive supply range from 10 V to 20 V - Undervoltage lockout for both channels - 3.3 V, 5 V and 15 V input logic patible - Ro HS pliant Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ.) = 620 V max. = 0.36 A/0.7 A = 10 V - 17.5 V = 60 ns max. = 24 ns/48 ns Package DSO-14 DSO-8 Potential applications - Motor drives, General purpose inverters - Refrigeration pressors, home appliance - Half-bridge and full-bridge converters in offline AC-DC power supplies for tele and lighting Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 2ED05 is a 600-V half-bridge gate driver family. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are patible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied. DC-Bus +5V µC PWM_H PWM_L GND 2EDL05x06yy...