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2EDL23I06PJ - 600V Half Bridge Gate Driver

General Description

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Key Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +600 V.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +1.8 A/-2.5 A.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • Interlock, Enable, Fault, and over current protection.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.

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Other Datasheets by Infineon

Part Number Description
2EDL23N06PJ 600V Half Bridge Gate Driver
2EDL05I06BF 600V Half Bridge Gate Driver
2EDL05I06PF 600V Half Bridge Gate Driver
2EDL05I06PJ 600V Half Bridge Gate Driver
2EDL05N06PF 600V Half Bridge Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology  Fully operational to +600 V  Integrated Ultra-fast, low RDS(ON) Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capability +1.8 A/-2.5 A  Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology  Interlock, Enable, Fault, and over current protection  10 ns typ., 60 ns max. propagation delay matching  dV/dt immune ±50 V  Undervoltage lockout for both channels  3.3 V, 5 V and 15 V input logic compatible  RoHS compliant Potential applications Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ. CL=4.9 nF) = 620 V max. = 1.