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2EDL23N06PJ - 600V Half Bridge Gate Driver

This page provides the datasheet information for the 2EDL23N06PJ, a member of the 2EDL23I06PJ 600V Half Bridge Gate Driver family.

Datasheet Summary

Description

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Features

  • Infineon thin-film-SOI-technology.
  • Fully operational to +600 V.
  • Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
  • Floating channel designed for bootstrap operation.
  • Output source/sink current capability +1.8 A/-2.5 A.
  • Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
  • Interlock, Enable, Fault, and over current protection.
  • 10 ns typ. , 60 ns max. propagation delay matching.
  • dV/dt immune ±50 V.

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Datasheet preview – 2EDL23N06PJ

Datasheet Details

Part number 2EDL23N06PJ
Manufacturer Infineon
File Size 1.15 MB
Description 600V Half Bridge Gate Driver
Datasheet download datasheet 2EDL23N06PJ Datasheet
Additional preview pages of the 2EDL23N06PJ datasheet.

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Full PDF Text Transcription

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2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology  Fully operational to +600 V  Integrated Ultra-fast, low RDS(ON) Bootstrap Diode  Floating channel designed for bootstrap operation  Output source/sink current capability +1.8 A/-2.5 A  Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology  Interlock, Enable, Fault, and over current protection  10 ns typ., 60 ns max. propagation delay matching  dV/dt immune ±50 V  Undervoltage lockout for both channels  3.3 V, 5 V and 15 V input logic compatible  RoHS compliant Potential applications Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching tf/tr (typ. CL=4.9 nF) = 620 V max. = 1.
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