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2EDS8265H Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

2EDS8265H datasheet preview

Datasheet Details

Part number 2EDS8265H
Datasheet 2EDS8265H 2EDF7275F Datasheet (PDF)
File Size 726.18 KB
Manufacturer Infineon
Description MOSFET gate-driver
2EDS8265H page 2 2EDS8265H page 3

2EDS8265H Overview

The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent mon-mode rejection and fast signal propagation, 2EDi is particularly well suited for driving medium- to high-voltage MOSFETs (CoolMOS™, OptiMOS™, CoolSIC™, CoolGaN™)...

2EDS8265H Key Features

  • 4 A/8 A or 1 A/2 A source/sink output current
  • Up to 10 MHz PWM switching frequency
  • 3 ns channel-to-channel mismatch
  • +7/-6 ns propagation delay variance
  • mon Mode Transient Immunity CMTI >150 V/ns
  • Fast safety turn-off in case of input side Undervoltage Lockout (UVLO)
  • Output supply voltage from 4.5 V to 20 V with 4 V or 8 V UVLO threshold
  • Wide temperature operating range TJ = -40°C to +150°C
  • RoHS pliant wide /narrow-body (WB/NB) DSO16 and 5 mm × 5 mm LGA packages
  • Fully qualified according to JEDEC for Industrial

2EDS8265H Applications

  • 2EDSx with reinforced isolation
  • DIN V VDE V 0884-10 (2006-12) pliant with VIOTM = 8 kVpk and VIOSM = 6.25 kVpk (tested at 10 kVpk)
  • Certified according to UL1577 (Ed. 5) opto-coupler ponent isolation standard with VISO = 5700 VRMS
  • Certified according to DIN EN IEC 62368-1 and corresponding CQC certificates
  • 2EDFx with functional isolation: Production test with 1.5 kVDC for 10 ms
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2EDS8265H Distributor

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