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OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested
IPD30N06S2L-23
Product Summary V DS R DS(on),max (SMD version) ID
55 V 23 mΩ 30 A
PG-TO252-3-11
Type IPD30N06S2L-23
Package
Marking
PG-TO252-3-11 2N06L23
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DI
2N06L23 Datasheet
