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65S1K0CE - MOSFET

General Description

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Key Features

  • Extremely low losses due to very low FOM Rdson.
  • Qg and Eoss.
  • Very high commutation ruggedness.
  • Easy to use/drive.
  • Pb-free plating, Halogen free mold compound.
  • Qualified for standard grade.

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Full PDF Text Transcription for 65S1K0CE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 65S1K0CE. For precise diagrams, and layout, please refer to the original PDF.

IPA65R1K0CE MOSFET 650VCoolMOS™CEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)p...

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voltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

More Datasheets from Infineon

Part Number Description
65S650CE MOSFET