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Infineon Technologies Electronic Components Datasheet

900N15N Datasheet

Power Transistor

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s
OptiMOSTM3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ900N15NS3 G
Product Summary
V DS
R DS(on),max
ID
150 V
90 mΩ
13 A
PG-TSDSON-8
Type
BSZ900N15NS3 G
Package
PG-TSDSON-8
Marking
900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
13
8
52
30
±20
38
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2011-05-16


Infineon Technologies Electronic Components Datasheet

900N15N Datasheet

Power Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
6 cm2 cooling area3)
BSZ900N15NS3 G
min.
Values
typ.
Unit
max.
- - 3.3 K/W
- - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
V DS=120 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=10 A
V GS=8 V, I D=5 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=10 A
150
2
-
-
-
-
-
-
6
-
3
0.01
10
1
74
75
1.7
12
-V
4
1 µA
100
100 nA
90 mΩ
91
-Ω
-S
3) see figure 3
Rev. 2.1
page 2
2011-05-16


Part Number 900N15N
Description Power Transistor
Maker Infineon
Total Page 9 Pages
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