Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
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AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjm...
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Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRF1010Z Datasheet
