AUIRF1010Z
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
AUIRF1010Z AUIRF1010ZS AUIRF1010ZL
VDSS
HEXFET® Power MOSFET 55V
RDS(on) max.
7.5m
ID (Silicon Limited)
94A
ID (Package Limited)
75A
TO-220AB AUIRF1010Z
G Gate
D2Pak AUIRF1010ZS
D Drain
S GD
TO-262 AUIRF1010ZL
S Source
Base part number
AUIRF1010Z AUIRF1010ZL
AUIRF1010ZS
Pa...
