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AUIRF1010ZS - Power MOSFET

Download the AUIRF1010ZS datasheet PDF. This datasheet also covers the AUIRF1010Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • l l l l l D HEXFET® Power MOSFET AUIRF1010Z AUIRF1010ZS AUIRF1010ZL 55V 7.5mΩ 94A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF1010Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF1010ZS Power MOSFET Infineon
AUIRF1010Z Power MOSFET Infineon
AUIRF1010ZL Power MOSFET Infineon
AUIRF1010EZ Power MOSFET Infineon
AUIRF1010EZL Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF1010Z Power MOSFET
AUIRF1010ZL Power MOSFET
AUIRF1010EZ Power MOSFET
AUIRF1010EZL Power MOSFET
AUIRF1010EZS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97458 AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l l l l l D HEXFET® Power MOSFET AUIRF1010Z AUIRF1010ZS AUIRF1010ZL 55V 7.5mΩ 94A 75A D V(BR)DSS RDS(on) max. ID (Silicon Limited) G S Description www.DataSheet4U.com Specifically designed for Automotive applications, ID (Package Limited) D this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .