Datasheet Summary
- 97458
AUTOMOTIVE GRADE
Features
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS pliant l Automotive Qualified
- l l l l l
HEXFET® Power MOSFET
AUIRF1010Z AUIRF1010ZS AUIRF1010ZL
55V 7.5mΩ 94A 75A
V(BR)DSS RDS(on) max. ID (Silicon Limited)
Description
.. Specifically designed for Automotive applications,
ID (Package Limited)
D this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed...