Description
www.DataSheet4U.com Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- O O O O O O O
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- HEXFET® Power MOSFET
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AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL
60V 8.5mΩ 84A 75A
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V(BR)DSS RDS(on) max. ID (Silicon Limited)
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ID (Package Limited)
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AUIRF1010EZ Datasheet
