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Infineon Technologies Electronic Components Datasheet

AUIRF3305 Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRF3305
HEXFET® Power MOSFET
V(BR)DSS
RDS(on) max.
ID
55V
8.0m
140A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
G
Gate
GDS
TO-220AB
AUIRF3305
D
Drain
S
Source
Base part number
AUIRF3305
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRF3305
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value) 
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
140
99
560
330
2.2
± 20
470
860
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
RJC
RCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RJA
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
2019-12-03


Infineon Technologies Electronic Components Datasheet

AUIRF3305 Datasheet

Power MOSFET

No Preview Available !

AUIRF3305
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.055 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 8.0 m VGS = 10V, ID = 75A 
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
41 ––– ––– S VDS = 25V, ID = 75A
–––
–––
–––
–––
25
250
µA
VDS = 55 V, VGS = 0V
VDS = 55V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
Diode Characteristics
––– 100 150
––– 21 –––
––– 45 –––
––– 16 –––
––– 88 –––
––– 43 –––
––– 34 –––
––– 4.5 –––
––– 7.5 –––
––– 3650 –––
––– 1230 –––
––– 450 –––
––– 4720 –––
––– 930 –––
––– 1490 –––
ID = 75A
nC VDS = 44V
VGS = 10V
VDD = 28V
ns
ID = 75A
RG= 2.6
VGS = 10V
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 44V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
130
Max. Units
Conditions
75
560
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.3 V TJ = 25°C,IS = 75A,VGS = 0V 
86 ns TJ = 25°C ,IF = 75A, VDD = 28V
190 nC di/dt = 100A/µs 
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.17mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
Ris measured at TJ of approximately 90°C.
All AC and DC test conditions based on former package limited current of 75A.
2
2019-12-03



Part Number AUIRF3305
Description Power MOSFET
Maker Infineon
Total Page 3 Pages
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