Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
l l l l l l l l l
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
Full PDF Text Transcription for AUIRF3305 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF3305. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE MOSFET PD - 96336 AUIRF3305 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating T...
View more extracted text
ar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 55V 8mΩ 140A G S RDS(on) max. ID Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.