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AUIRF5210S Datasheet Power MOSFET

Manufacturer: Infineon

Overview:   AUTOMOTIVE GRADE AUIRF5210S.

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications..

VDSS RDS(on) ID G Gate max.

Key Features

  • Advanced Process Technology.
  • P-Channel MOSFET.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .