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AUIRF7304Q - Dual P-Channel MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dual P Channel MOSFET.
  • Dynamic dv/dt Rating.
  • Logic Level.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Full PDF Text Transcription

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  Features  Advanced Planar Technology  Low On-Resistance  Dual P Channel MOSFET  Dynamic dv/dt Rating  Logic Level  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7304Q   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View HEXFET® Power MOSFET VDSS -20V RDS(on) max. ID 0.090 -4.3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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