Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- l l l l l l l l l
Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified.
- HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
V(BR)DSS RDS(on) max. ID
-20V 0.090Ω -4.3A
6 5
Top View.
AUIRF7304Q Datasheet
