Datasheet4U Logo Datasheet4U.com

AUIRF7304Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 V(BR)DSS RDS(on) max. ID -20V 0.090Ω -4.3A 6 5 Top View.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7304Q Dual P-Channel MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF7303Q Power MOSFET
AUIRF7309Q Power MOSFET
AUIRF7313Q Power MOSFET
AUIRF7316Q Power MOSFET
AUIRF7319Q Power MOSFET
AUIRF7341Q Power MOSFET
AUIRF7342Q Power MOSFET
AUIRF7343Q Power MOSFET
AUIRF7379Q Power MOSFET
AUIRF7103Q Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 97653A AUIRF7304Q Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Dynamic dV/dT Rating Logic Level 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 V(BR)DSS RDS(on) max. ID -20V 0.090Ω -4.3A 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.