Datasheet4U Logo Datasheet4U.com

AUIRF7304Q - Dual P-Channel MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dual P Channel MOSFET.
  • Dynamic dv/dt Rating.
  • Logic Level.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  Features  Advanced Planar Technology  Low On-Resistance  Dual P Channel MOSFET  Dynamic dv/dt Rating  Logic Level  150°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7304Q   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View HEXFET® Power MOSFET VDSS -20V RDS(on) max. ID 0.090 -4.3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.