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AUIRF7379Q - Dual N/P-Channel MOSFET

Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N and P Channel MOSFET.
  • Surface Mount.
  • Available in Tape & Reel.
  • 150°C Operating Temperature.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   N-.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF7379Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   N-CHANNEL MOSFET N-CH P-CH S1 1 G1 2 8 D1 7 D1 VDSS 30V -30V S2 3 6 D2 RDS(on) typ. 0.038 0.070 G2 4 5 D2 max. 0.045 0.090 P-CHANNEL MOSFET ID 5.8A -4.3A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
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