AUIRF7736M2TR Datasheet - Infineon

Power MOSFET

AUIRF7736M2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications Base Part Number Package Type Standard Pack Form Quantity

AUIRF7736M2TR General Description

The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with e.

AUIRF7736M2TR Datasheet (419.58 KB)