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AUIRFU8401 - Power MOSFET

Download the AUIRFU8401 datasheet PDF (AUIRFR8401 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • New Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 3.2m 4.25m 100A 100A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR8401-Infineon.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Infineon

Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRFR8401 AUIRFU8401 Features  Advanced Process Technology  New Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 3.2m 4.25m 100A 100A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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