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AUIRFU8401 - Power MOSFET

This page provides the datasheet information for the AUIRFU8401, a member of the AUIRFR8401 Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  •  Advanced Process Technology.
  •  New Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  •  Fast Switching.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.
  •   D VDSS RDS(on) typ. 40V 3.2m 4.25m 100A 100A G S max ID (Silicon Limited) ID (Package Limited).

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AUTOMOTIVE GRADE AUIRFR8401 AUIRFU8401 HEXFET® Power MOSFET Features  Advanced Process Technology  New Ultra Low On-Resistance 175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   D VDSS RDS(on) typ. 40V 3.2m 4.25m 100A 100A G S max ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
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