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AUIRFU8401 - Power MOSFET

Download the AUIRFU8401 datasheet PDF. This datasheet also covers the AUIRFR8401 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • New Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 3.2m 4.25m 100A 100A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR8401-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU8401 Power MOSFET International Rectifier
AUIRFU8401 Power MOSFET International Rectifier
AUIRFU8403 Power MOSFET International Rectifier
AUIRFU8405 Power MOSFET International Rectifier
AUIRFU024N Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFU8403 Power MOSFET
AUIRFU8405 Power MOSFET
AUIRFU120Z Power MOSFET
AUIRFU4105Z Power MOSFET
AUIRFU4292 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE AUIRFR8401 AUIRFU8401 Features  Advanced Process Technology  New Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 3.2m 4.25m 100A 100A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.