Infineon Technologies AUIRFU8401
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.FEATURES
● Advanced Process Technology● New Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified * HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 3.2m 4.25m 100A 100A
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.APPLICATIONS
● Electric Power Steering (EPS)● Battery Switch
● Start/Stop Micro Hybrid
● Heavy Loads
● DC-DC Converter D D S G D-Pak AUI