FEATURES
l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. APPLICATIONS
l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Converter Ordering Information Base part number Package Type Standard Pack G G Gate AUIRFR8403 AUIRFU8403 HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 2.4mΩ max. 3.1mΩ ID (Silicon Limited...
International Rectifier
