AUIRGP4062D-E Features
* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 5µs SCSOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co-pak Diode
* Tighter Distribution of Parameters
* Lead-Free, RoHS
Datasheet Details
AUIRGP4062D-E, AUIRGP4062D
554.63 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: AUIRGP4062D-E, AUIRGP4062D.
Please refer to the document for exact specifications by model.
AUIRGP4062D-E Distributor
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