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Infineon Technologies Electronic Components Datasheet

AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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AUTOMOTIVE GRADE
AUIRGP4062D
AUIRGP4062D-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs SCSOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
C
G
E
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.60V
C
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
GC E
TO-247AC
AUIRGP4062D
GC E
TO-247AD
AUIRGP4062D-E
G
Gate
C
Collector
E
Emitter
Base Part Number
AUIRGP4062D
AUIRGP4062D-E
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP4062D
AUIRGP4062D-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current VGE =15V
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Clamped Inductive Load Current VGE =20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Repetitive Forward Current
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
48
24
72
96
48
24
96
±20
±30
250
125
-55 to +175
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) TO-247
RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) TO-247
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247
RJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247
* Qualification standards can be found at www.infineon.com
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.65
1.62
–––
–––
Units
°C/W
1
2017-08-25


Infineon Technologies Electronic Components Datasheet

AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

AUIRGP4062D/AUIRGP4062D-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
4.0
VGE(th)/TJ Threshold Voltage temp. coefficient
gfe
Forward Transconductance
ICES
Collector-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
0.30
1.60
2.03
2.04
-18
17
2.0
775
1.80
1.28
V VGE = 0V, IC = 100µA
CT6
— V/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.95
IC = 24A, VGE = 15V, TJ = 25°C
5,6,7
V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11
IC = 24A, VGE = 15V, TJ = 175°C
6.5 V IC = 700µA
9,10,
— mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) 11,12
S VCE = 50V, IC = 24A,PW = 80µs
25
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V,TJ = 175°C
2.6
V
IF = 24A
IF = 24A, TJ = 175°C
8
±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg
Total Gate Charge (turn-on)
— 50 75
Qge
Gate-to-Emitter Charge (turn-on)
— 13 20
Qgc
Gate-to-Collector Charge (turn-on)
— 21 31
Eon
Turn-On Switching Loss
— 115 201
Eoff
Turn-Off Switching Loss
— 600 700
Etotal
td(on)
Total Switching Loss
Turn-On delay time
— 715 901
— 41 53
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
— 22 31
— 104 115
— 29 41
— 420 —
— 840 —
— 1260 —
— 40 —
tr
Rise time
— 24 —
td(off)
Turn-Off delay time
— 125 —
tf
Fall time
— 39 —
Cies
Input Capacitance
— 1490 —
Coes
Output Capacitance
— 129 —
Cres
Reverse Transfer Capacitance
— 45 —
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA Short Circuit Safe Operating Area
5
——
Erec
Reverse Recovery Energy of the Diode — 624 —
trr
Diode Reverse Recovery Time
— 89 —
Irr
Peak Reverse Recovery Current
— 37 —
Units
Conditions
IC = 24A
nC VGE = 15V
VCC = 400V
J
IC = 24A, VCC = 400V,
VGE = +15V,TJ = 25°C
ns RG = 10, L = 200H,LS = 150nH ,
Energy losses include tail & diode
reverse recovery
J
IC = 24A, VCC = 400V,
VGE = +15V,TJ = 175°C
ns RG = 10, L = 200H, LS = 150nH
Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
VCC = 480V, Vp = 600V
Rg = 10, VGE = +20V to 0V
s
VCC = 400V, Vp = 600V
Rg = 10, VGE = +15V to 0V
J TJ = 175°C
ns VCC = 400V,IF = 24A,VGE = 15V,
A RG = 10, L = 200H,LS = 150nH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Ref. Fig.
24
CT1
CT4
13,15,
CT4
WF1,WF2
14,16
CT4
WF1
WF2
23
4
CT2
22,CT3
WF4
17,18,19,
20,21
WF3
2
2017-08-25


Part Number AUIRGP4062D-E
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker Infineon
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