Infineon Technologies Electronic Components Datasheet

AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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AUTOMOTIVE GRADE

AUIRGP4062D

AUIRGP4062D-E

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

 Low VCE (on) Trench IGBT Technology

 Low Switching Losses

 5µs SCSOA

 Square RBSOA

 100% of The Parts Tested for ILM

 Positive VCE (on) Temperature Coefficient.

 Ultra Fast Soft Recovery Co-pak Diode

 Tighter Distribution of Parameters

 Lead-Free, RoHS Compliant

 Automotive Qualified *

n-channel

VCES = 600V

IC = 24A, TC = 100°C

tSC 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.60V

Benefits

 High Efficiency in a Wide Range of Applications

 Suitable for a Wide Range of Switching Frequencies due to

Low VCE (ON) and Low Switching Losses

 Rugged Transient Performance for Increased Reliability

 Excellent Current Sharing in Parallel Operation

 Low EMI

GC E

TO-247AC

AUIRGP4062D

GC E

TO-247AD

AUIRGP4062D-E

Gate

Collector

Emitter

Base Part Number

AUIRGP4062D

AUIRGP4062D-E

Package Type

TO-247AC

TO-247AD

Standard Pack

Form

Quantity

Tube

Orderable Part Number

AUIRGP4062D

AUIRGP4062D-E

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;

and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings

are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

VCES

Collector-to-Emitter Voltage

IC @ TC = 25°C Continuous Collector Current

IC @ TC = 100°C Continuous Collector Current

ICM

Pulse Collector Current VGE =15V

ILM

IF @ TC = 25°C

IF @ TC = 100°C

IFSM

Clamped Inductive Load Current VGE =20V

Diode Continuous Forward Current

Maximum Repetitive Forward Current 

VGE

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

PD @ TC = 25°C Maximum Power Dissipation

PD @ TC = 100°C Maximum Power Dissipation

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

Max.

600

±20

±30

250

125

-55 to +175

300 (0.063 in.(1.6mm) from case)

10 lbf·in (1.1 N·m)

Units

°C

Thermal Resistance

Parameter

RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) TO-247

RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) TO-247

RCS

Thermal Resistance, Case-to-Sink (flat, greased surface) TO-247

RJA

Thermal Resistance, Junction-to-Ambient (typical socket mount) TO-247

* Qualification standards can be found at www.infineon.com

Min.

–––

Typ.

–––

0.24

Max.

0.65

1.62

–––

Units

°C/W

2017-08-25

Infineon Technologies Electronic Components Datasheet

AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

AUIRGP4062D/AUIRGP4062D-E

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.

V(BR)CES

Collector-to-Emitter Breakdown Voltage 600

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —

—

VCE(on)

Collector-to-Emitter Saturation Voltage

—

VGE(th)

Gate Threshold Voltage

4.0

VGE(th)/TJ Threshold Voltage temp. coefficient

—

gfe

Forward Transconductance

—

ICES

Collector-to-Emitter Leakage Current

—

VFM

Diode Forward Voltage Drop

—

IGES

Gate-to-Emitter Leakage Current

—

0.30

1.60

2.03

2.04

—

-18

2.0

775

1.80

1.28

—

V VGE = 0V, IC = 100µA

CT6

— V/°C VGE = 0V, IC = 1mA (25°C-175°C)

1.95

IC = 24A, VGE = 15V, TJ = 25°C

5,6,7

—

V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11

—

IC = 24A, VGE = 15V, TJ = 175°C

6.5 V IC = 700µA

9,10,

— mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) 11,12

—

S VCE = 50V, IC = 24A,PW = 80µs

—

µA

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 600V,TJ = 175°C

2.6

IF = 24A

IF = 24A, TJ = 175°C

±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max.

Total Gate Charge (turn-on)

— 50 75

Qge

Gate-to-Emitter Charge (turn-on)

— 13 20

Qgc

Gate-to-Collector Charge (turn-on)

— 21 31

Eon

Turn-On Switching Loss

— 115 201

Eoff

Turn-Off Switching Loss

— 600 700

Etotal

td(on)

Total Switching Loss

Turn-On delay time

— 715 901

— 41 53

td(off)

Eon

Eoff

Etotal

td(on)

Rise time

Turn-Off delay time

Fall time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On delay time

— 22 31

— 104 115

— 29 41

— 420 —

— 840 —

— 1260 —

— 40 —

Rise time

— 24 —

td(off)

Turn-Off delay time

— 125 —

Fall time

— 39 —

Cies

Input Capacitance

— 1490 —

Coes

Output Capacitance

— 129 —

Cres

Reverse Transfer Capacitance

— 45 —

RBSOA Reverse Bias Safe Operating Area

FULL SQUARE

SCSOA Short Circuit Safe Operating Area

——

Erec

Reverse Recovery Energy of the Diode — 624 —

trr

Diode Reverse Recovery Time

— 89 —

Irr

Peak Reverse Recovery Current

— 37 —

Units

Conditions

IC = 24A

nC VGE = 15V

VCC = 400V

J

IC = 24A, VCC = 400V,

VGE = +15V,TJ = 25°C

ns RG = 10, L = 200H,LS = 150nH ,

Energy losses include tail & diode

reverse recovery

J

IC = 24A, VCC = 400V,

VGE = +15V,TJ = 175°C 

ns RG = 10, L = 200H, LS = 150nH

Energy losses include tail & diode

reverse recovery

VGE = 0V

pF VCC = 30V

f = 1.0Mhz

TJ = 175°C, IC = 96A

VCC = 480V, Vp = 600V

Rg = 10, VGE = +20V to 0V

s

VCC = 400V, Vp = 600V

Rg = 10, VGE = +15V to 0V

J TJ = 175°C

ns VCC = 400V,IF = 24A,VGE = 15V,

A RG = 10, L = 200H,LS = 150nH

Notes:

 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10.

 This is only applied to TO-220AB package.

 Pulse width limited by max. junction temperature.

 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Ref. Fig.

CT1

CT4

13,15,

CT4

WF1,WF2

14,16

CT4

WF1

WF2

CT2

22,CT3

WF4

17,18,19,

20,21

WF3

2017-08-25

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AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

AUIRGP4062D-E Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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