• Part: AUIRGP4062D-E
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 554.63 KB
AUIRGP4062D-E Datasheet (PDF) Download
Infineon
AUIRGP4062D-E

Key Features

  • Low VCE (on) Trench IGBT Technology
  • Low Switching Losses
  • Square RBSOA
  • 100% of The Parts Tested for ILM
  • Positive VCE (on) Temperature Coefficient
  • Ultra Fast Soft Recovery Co-pak Diode
  • Tighter Distribution of Parameters
  • Lead-Free, RoHS compliant
  • Automotive Qualified * C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits
  • High Efficiency in a Wide Range of Applications