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AUIRGP4063D-E - INSULATED GATE BIPOLAR TRANSISTOR

Download the AUIRGP4063D-E datasheet PDF. This datasheet also covers the AUIRGP4063D variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low switching losses.
  • Maximum Junction temperature 175 °C.
  • 5 μS short circuit SOA G.
  • Square RBSOA.
  • 100% of the parts tested for 4X rated current (ILM).
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra fast soft Recovery Co-Pak Diode E n-channel.
  • Tight parameter distribution.
  • Lead Free Package C VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGP4063D-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRGP4062D INSULATED GATE BIPOLAR TRANSISTOR Infineon
AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR Infineon
AUIRGP35B60PD IGBT Infineon
AUIRGP35B60PD-E IGBT Infineon
AUIRGP50B60PD1 IGBT Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRGP4063D INSULATED GATE BIPOLAR TRANSISTOR
AUIRGP4066D1 INSULATED GATE BIPOLAR TRANSISTOR
AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR
AUIRGP35B60PD IGBT
AUIRGP35B60PD-E IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRGP4063D AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.