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AUIRGP4066D1-E - INSULATED GATE BIPOLAR TRANSISTOR

Download the AUIRGP4066D1-E datasheet PDF. This datasheet also covers the AUIRGP4066D1 variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified.
  • E C G C G E C AUIRGP4066D1 AUIRGP4066D1-E VCES = 600V I.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGP4066D1-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified * E C G C G E C AUIRGP4066D1 AUIRGP4066D1-E VCES = 600V IC(Nominal) = 75A tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.