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AUIRGS30B60K Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: Infineon

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Datasheet Details

Part number AUIRGS30B60K
Manufacturer Infineon
File Size 394.85 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AUIRGS30B60K Datasheet

Overview

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature rated at 175°C.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance for Increased Reliability.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50.

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