Datasheet4U Logo Datasheet4U.com

AUIRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE(on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE(on) Temperature Coefficient.
  • Maximum Junction Temperature rated at 175°C.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • AUIRGSL30B60K C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient.

📥 Download Datasheet

Datasheet preview – AUIRGS30B60K

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE(on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free, RoHS Compliant • Automotive Qualified * AUIRGSL30B60K C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance • Low EMI • Excellent Current Sharing in Parallel Operation D2Pak TO-262 AUIRGS30B60K AUIRGSL30B60K GC E Absolute Maximum Ratings Gate Collector Emitter Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Published: |