AUIRGS30B60K Description
AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR.
AUIRGS30B60K Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- 10µs Short Circuit Capability
- Square RBSOA
- Positive VCE (on) Temperature Coefficient
- Maximum Junction Temperature rated at 175°C
- Lead-Free, RoHS pliant
- Automotive Qualified
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance for Increased Reliability
- Low EMI