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AUIRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature rated at 175°C.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance for Increased Reliability.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50.

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Datasheet preview – AUIRGS30B60K

Datasheet Details

Part number AUIRGS30B60K
Manufacturer Infineon
File Size 394.85 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AUIRGS30B60K Datasheet
Additional preview pages of the AUIRGS30B60K datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (on) Non Punch Through IGBT Technology  10µs Short Circuit Capability  Square RBSOA  Positive VCE (on) Temperature Coefficient.  Maximum Junction Temperature rated at 175°C  Lead-Free, RoHS Compliant  Automotive Qualified * * Benefits  Benchmark Efficiency for Motor Control  Rugged Transient Performance for Increased Reliability  Low EMI  Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50A,TC = 100C At TJ = 175°C tSC 10µs, TJ = 150°C VCE(on) typ. = 1.
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