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AUIRLS4030 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  •  Optimized for Logic Level Drive.
  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  •  Logic Level Gate Drive.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   G.

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AUTOMOTIVE GRADE Features  Optimized for Logic Level Drive  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive 175°C Operating Temperature Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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