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AUIRLS4030 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l l AUIRLS4030 AUIRLSL4030 HEXFET® Power MOSFET D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS RDS(on) typ. max. ID 100V 3.4mΩ 4.3mΩ 180A.

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AUTOMOTIVE GRADE PD - 96406B Features l l l l l l l l AUIRLS4030 AUIRLSL4030 HEXFET® Power MOSFET D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID 100V 3.4mΩ 4.3mΩ 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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