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AUIRLU2905 - Power MOSFET

Download the AUIRLU2905 datasheet PDF (AUIRLR2905 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Logic Level Gate Drive.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR2905-Infineon.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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