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AUIRLU2905 - HEXFET Power MOSFET

Download the AUIRLU2905 datasheet PDF. This datasheet also covers the AUIRLR2905 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Current Regulator Same Type as D. U. T. 50K 12V .2F .3F D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www. irf. com © 2012 International Rectifier June 6, 2012 AUIRLR/U2905 D. U. T + ‚ - Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Con.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRLR2905-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLU2905 Power MOSFET Infineon
AUIRLU024N Power MOSFET Infineon
AUIRLU024Z Power MOSFET Infineon
AUIRLU3114Z Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRLU024N Power MOSFET
AUIRLU024Z Power MOSFET
AUIRLU3110Z Power MOSFET
AUIRLU3114Z Power MOSFET
AUIRL1404L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.