Datasheet4U Logo Datasheet4U.com

AUIRLU2905 - Power MOSFET

This page provides the datasheet information for the AUIRLU2905, a member of the AUIRLR2905 Power MOSFET family.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Logic Level Gate Drive.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D.

📥 Download Datasheet

Datasheet preview – AUIRLU2905

Datasheet Details

Part number AUIRLU2905
Manufacturer Infineon
File Size 461.75 KB
Description Power MOSFET
Datasheet download datasheet AUIRLU2905 Datasheet
Additional preview pages of the AUIRLU2905 datasheet.

📁 Similar Datasheet

  • AUIRLU2905 - HEXFET Power MOSFET (International Rectifier)
  • AUIRLU024N - Power MOSFET (International Rectifier)
  • AUIRLU024Z - Power MOSFET (International Rectifier)
  • AUIRLU3110Z - Power MOSFET (International Rectifier)
  • AUIRLU3114Z - Power MOSFET (International Rectifier)
  • AUIRL1404L - Power MOSFET (International Rectifier)
  • AUIRL1404S - Power MOSFET (International Rectifier)
  • AUIRL1404Z - Power MOSFETs (International Rectifier)
  • AUIRL1404ZL - Power MOSFETs (International Rectifier)
  • AUIRL1404ZS - Power MOSFETs (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS RDS(on) ID D HEXFET® Power MOSFET 55V max. 27m 42A D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Published: |