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Infineon Technologies Electronic Components Datasheet

BAR90-02LS Datasheet

Silicon Deep Trench PIN Diodes

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Silicon Deep Trench PIN Diodes
Optimized for low bias current antenna
switches in hand held applications
Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
Low forward resistance
(typ. 1.3 @ IF = 3 mA)
Improved ON / OFF mode harmonic
distortion balance
Pb-free (RoHS compliant) package
BAR90...
BAR90-02LRH
BAR90-02LS
12
BAR90-098LRH
4
D1
3
D2
12
Type
BAR90-02LRH
BAR90-02LS
BAR90-098LRH
Package
TSLP-2-7
TSSLP-2-1
TSLP-4-7
Configuration
single, leadless
single, leadless
anti-parallel pair, leadless
LS(nH)
0.4
0.2
0.4
Marking
R9
J
T9
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 137 °C, BAR90-02LS
TS 133°C, all others
Junction temperature
Operating temperature range
Storage temperature
VR
IF
Ptot
Tj
Top
Tstg
1
Value
80
100
150
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
2012-10-09


Infineon Technologies Electronic Components Datasheet

BAR90-02LS Datasheet

Silicon Deep Trench PIN Diodes

No Preview Available !

BAR90...
Thermal Resistance
Parameter
Junction - soldering point1)
BAR90-02LS
All others
Symbol
RthJS
Value
90
65
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 60 V
Forward voltage
IF = 3 mA
IF = 100 mA
V(BR)
IR
VF
80 -
-
- - 50
0.75 0.81 0.87
- 0.9 1
Unit
V
nA
V
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2012-10-09


Part Number BAR90-02LS
Description Silicon Deep Trench PIN Diodes
Maker Infineon
Total Page 10 Pages
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