Infineon Technologies BAR90-02ELS
Silicon Deep Trench PIN Diodes
| Part No. | BAR90-02ELS |
|---|---|
| Datasheet | BAR90-02ELS Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Deep Trench PIN Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 137 °C, BAR90-02ELS TS ≤ 133°C, all others VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Value 80 100 150 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C 1 2013-06-10 BAR90... Thermal Resistance Parameter Junction - soldering point1) BAR90-02ELS All others Symbol RthJS Value ≤ 90 ≤ 65 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 3 mA IF = 100 mA V(BR) IR VF 80 - - - - 50 0.75 0.81 0.87 - 0.9 1 Unit V nA V 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-06-10 BAR90...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol min. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz CT - Values typ. max.
