BAR90-02EL Datasheet | Infineon

description This Infineon RF PIN diode provides high-voltage handling capabilities and es with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and support designers in creating smaller and lighter end-solutions. Feature list - Very low capacitance C = 0.23 p F (typical) at voltage VR = 0 V and frequency f = 1 GHz - Low forward resistance RF = 1.6 Ω (typical) at IF = 3 m A and frequency f = 100 MHz - Balanced ON / OFF harmonic distortion - TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) with a 0402 foot print - Pb-free, Ro HS pliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches in: - Set-top boxes, digital media players - Laptops and desktop PCs Device information Table 1 Part information Product name / Ordering code BAR90-02EL / BAR9002ELE6327XTMA1 Package TSLP-2-19 Pin configuration Single, leadless Marking Pieces / Reel 15 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! .infineon. Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 Single silicon RF PIN diode Table of contents Table of contents Product description - - - - - - - - - - - - - . . . 1 Feature list - - - - -...