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BGA5L1BN6 Datasheet 18dB High Gain Low Noise Amplifier

Manufacturer: Infineon

Overview

BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE.

Key Features

  • Operating frequencies: 600 - 1000 MHz.
  • Insertion power gain: 18.5 dB.
  • Insertion Loss in bypass mode: 2.7 dB.
  • Low noise figure: 0.7 dB.
  • Low current consumption: 8.2 mA.
  • Multi-state control: Bypass- and high gain-Mode.
  • Ultra small TSNP-6-10 leadless package.
  • RF output internally matched to 50 Ohm.
  • Low external component count 0.7 x 1.1 mm2.