Datasheet Details
| Part number | BGA5H1BN6 |
|---|---|
| Manufacturer | Infineon |
| File Size | 331.21 KB |
| Description | 18dB High Gain Low Noise Amplifier |
| Datasheet |
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The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz.
The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA in the application configuration described in Chapter 4.
| Part number | BGA5H1BN6 |
|---|---|
| Manufacturer | Infineon |
| File Size | 331.21 KB |
| Description | 18dB High Gain Low Noise Amplifier |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| BGA2001 | Silicon MMIC amplifier | NXP |
| BGA2003 | Silicon MMIC amplifier | NXP |
| BGA2012 | 1900 MHz high linear low noise amplifier | NXP |
| BGA2022 | MMIC mixer | NXP |
| BGA2031 | MMIC variable gain amplifier | NXP |
| Part Number | Description |
|---|---|
| BGA524N6 | Silicon Germanium Low Noise Amplifier |
| BGA525N6 | broadband Low Power LNA |
| BGA535N6 | broadband Low Power LNA |
| BGA5L1BN6 | 18dB High Gain Low Noise Amplifier |
| BGA5M1BN6 | 18dB High Gain Low Noise Amplifier |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.