Datasheet4U Logo Datasheet4U.com

BGA5H1BN6 Datasheet 18db High Gain Low Noise Amplifier

Manufacturer: Infineon

Overview: BGA5H1BN6 BGA5H1BN6 18dB High Gain Low Noise Amplifier for LTE.

Key Features

  • Operating frequencies: 2300 - 2690 MHz.
  • Insertion power gain: 18.1 dB.
  • Insertion Loss in bypass mode: 5.2 dB.
  • Low noise figure: 0.7 dB.
  • Low current consumption: 8.5 mA.
  • Multi-state control: Bypass- and high gain-Mode.
  • Ultra small TSNP-6-10 leadless package.
  • RF output internally matched to 50 Ohm.
  • Low external component count 0.7 x 1.1 mm2.

More Datasheets from Infineon

Part Number Description
BGA524N6 Silicon Germanium Low Noise Amplifier
BGA525N6 broadband Low Power LNA
BGA535N6 broadband Low Power LNA
BGA5L1BN6 18dB High Gain Low Noise Amplifier
BGA5M1BN6 18dB High Gain Low Noise Amplifier
BGA10H1MN9 High-band Low Noise Amplifier
BGA123L4 Small Footprint Ultra Low Current Low Noise Amplifier
BGA123N6 Ultra Low Current Low Noise Amplifier
BGA125N6 Ultra Low Current Low Noise Amplifier
BGA231N7 Silicon Germanium GNSS Low Noise Amplifier

BGA5H1BN6 Distributor