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BGA5H1BN6 - 18dB High Gain Low Noise Amplifier

General Description

The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz.

The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA in the application configuration described in Chapter 4.

Key Features

  • Operating frequencies: 2300 - 2690 MHz.
  • Insertion power gain: 18.1 dB.
  • Insertion Loss in bypass mode: 5.2 dB.
  • Low noise figure: 0.7 dB.
  • Low current consumption: 8.5 mA.
  • Multi-state control: Bypass- and high gain-Mode.
  • Ultra small TSNP-6-10 leadless package.
  • RF output internally matched to 50 Ohm.
  • Low external component count 0.7 x 1.1 mm2.

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Datasheet Details

Part number BGA5H1BN6
Manufacturer Infineon
File Size 331.21 KB
Description 18dB High Gain Low Noise Amplifier
Datasheet download datasheet BGA5H1BN6 Datasheet

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BGA5H1BN6 BGA5H1BN6 18dB High Gain Low Noise Amplifier for LTE Highband Features • Operating frequencies: 2300 - 2690 MHz • Insertion power gain: 18.1 dB • Insertion Loss in bypass mode: 5.2 dB • Low noise figure: 0.7 dB • Low current consumption: 8.5 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 leadless package • RF output internally matched to 50 Ohm • Low external component count 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge.