BGA5L1BN6 Description
BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband.
BGA5L1BN6 Key Features
- Operating frequencies: 600
- 1000 MHz
- Insertion power gain: 18.5 dB
- Insertion Loss in bypass mode: 2.7 dB
- Low noise figure: 0.7 dB
- Low current consumption: 8.2 mA
- Multi-state control: Bypass- and high gain-Mode
- Ultra small TSNP-6-10 leadless package
- RF output internally matched to 50 Ohm
- Low external ponent count