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BGB707L7ESD - General purpose LNA MMIC

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Description

The BGB707L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology.

Minimum noise figure NFmin = 0.6 dB at 2.4 GHz, 3 V, 3 mA Supply voltage VCC = 1.8 V to 4.0 V at TA = 25 °C Integ

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Datasheet Details

Part number BGB707L7ESD
Manufacturer Infineon
File Size 860.01 KB
Description General purpose LNA MMIC
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BGB707L7ESD General purpose LNA MMIC with integrated ESD protection and active biasing Product description The BGB707L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology. Feature list • Minimum noise figure NFmin = 0.6 dB at 2.4 GHz, 3 V, 3 mA • Supply voltage VCC = 1.8 V to 4.0 V at TA = 25 °C • Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) • Wireless communications: WLAN 2.
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